AMD AE34G1601U1 4GB vs Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

需要考虑的原因
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 67

左右 -253% 更低的延时
更快的读取速度，GB/s

19.4 6.8

测试中的平均数值
更快的写入速度，GB/s

14.5 3.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 19
读取速度，GB/s

6.8 19.4
写入速度，GB/s

3.6 14.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 15
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

998 3290

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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Crucial Technology BLS8G4D30BESBK.8FB 8GB

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Samsung M471A2K43CB1-CRCR 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Nanya Technology M2Y1G64TU8HB4B-25C 1GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Avant Technology W6451U66J5213ND 4GB

Avant Technology W6451U66J5213ND 4GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Crucial Technology CT16G4DFD824A.C16FDD 16GB

Crucial Technology CT16G4DFD824A.C16FDD 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-2133C15-4GRB 4GB

G Skill Intl F4-2133C15-4GRB 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

SK Hynix HMA41GR7AFR4N-TF 8GB

SK Hynix HMA41GR7AFR4N-TF 8GB