AMD AE34G1601U2K 4GB vs Samsung M471B5273CH0-CH9 4GB

总分

AMD AE34G1601U2K 4GB

AMD AE34G1601U2K 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

差异规格评论

差异

AMD AE34G1601U2K 4GB

需要考虑的原因
AMD AE34G1601U2K 4GB

报告一个错误

更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 70

左右 -46% 更低的延时
更快的读取速度，GB/s

8.9 6.4

测试中的平均数值
更快的写入速度，GB/s

5.9 4.7

测试中的平均数值

规格

完整的技术规格清单

AMD AE34G1601U2K 4GB

Samsung M471B5273CH0-CH9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

70 48
读取速度，GB/s

6.4 8.9
写入速度，GB/s

4.7 5.9
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1219 1420

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4DFS8266.C8FB 16GB

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Kingston KHX2400C11D3/4GX 4GB

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Samsung M474A1G43DB0-CPB 8GB

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Patriot Memory (PDP Systems) 2400 C16 Series 16GB

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Corsair CML8GX3M2A1600C9 4GB

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Avant Technology J641GU49J2320NE 8GB

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A-DATA Technology DQVE1908 512MB

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V-Color Technology Inc. TL48G30S8KGRGB15 8GB

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Kingston KHX2133C13D4/4GX 4GB

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Crucial Technology BLS8G4S240FSD.16FBD2 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Kingston KHX2133C14D4/4G 4GB

Kingston KHX2133C14D4/4G 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

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Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Apacer Technology 78.CAGR9.40C0B 8GB

Apacer Technology 78.CAGR9.40C0B 8GB