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AMD AE34G2139U2 4GB
Gloway International (HK) STK4U2400D17082C 8GB

AMD AE34G2139U2 4GB vs Gloway International (HK) STK4U2400D17082C 8GB

总分
star star star star star
AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分
star star star star star
Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

差异 规格 评论

差异

AMD AE34G2139U2 4GB 需要考虑的原因
AMD AE34G2139U2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    56 left arrow 74
    左右 24% 更低的延时
Gloway International (HK) STK4U2400D17082C 8GB 需要考虑的原因
Gloway International (HK) STK4U2400D17082C 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.3 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.7 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD AE34G2139U2 4GB
Gloway International (HK) STK4U2400D17082C 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 74
  • 读取速度，GB/s
    7.4 left arrow 14.3
  • 写入速度，GB/s
    5.6 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1462 left arrow 1779

AMD AE34G2139U2 4GB RAM的比较

AMD R938G2130U2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB

Gloway International (HK) STK4U2400D17082C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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G Skill Intl F5-5600J4040C16G 16GB
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内存RAM
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内存RAM
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Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
内存RAM
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内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
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内存RAM
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Patriot Memory (PDP Systems) PSD34G16002 4GB
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内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Samsung M378A4G43MB1-CTD 32GB
内存RAM