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AMD AE34G2139U2 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB

AMD AE34G2139U2 4GB vs Patriot Memory (PDP Systems) 2400 C15 Series 4GB

总分
star star star star star
AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

差异 规格 评论

差异

AMD AE34G2139U2 4GB 需要考虑的原因
AMD AE34G2139U2 4GB
报告一个错误
Patriot Memory (PDP Systems) 2400 C15 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 56
    左右 -75% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD AE34G2139U2 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 32
  • 读取速度，GB/s
    7.4 left arrow 15.7
  • 写入速度，GB/s
    5.6 left arrow 11.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1462 left arrow 2854

AMD AE34G2139U2 4GB RAM的比较

AMD R938G2130U2S 8GB
SK Hynix HMA84GL7AFR4N-UH 32GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
内存RAM
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A-DATA Technology DDR4 2400 16GB
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G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM
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Samsung 1600 CL10 Series 8GB
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Hexon Technology Pte Ltd HEXON 1GB
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Team Group Inc. DDR4 2800 8GB
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内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Panram International Corporation M424051 4GB
Panram International Corporation M424051 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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内存RAM
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内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
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Kingston KHX3333C16D4/8GX 8GB
内存RAM
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SpecTek Incorporated ?????????????????? 2GB
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内存RAM
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A-DATA Technology VDQVE1B16 2GB
Kingston 9905665-009.A00G 4GB
Kingston 9905665-009.A00G 4GB
内存RAM
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SK Hynix HMA82GS6CJR8N-VK 16GB
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Mushkin 99[2/7/4]209F 8GB
内存RAM