AMD R5316G1609U2K 8GB vs G Skill Intl F4-2800C15-4GVRB 4GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

G Skill Intl F4-2800C15-4GVRB 4GB

G Skill Intl F4-2800C15-4GVRB 4GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

G Skill Intl F4-2800C15-4GVRB 4GB

需要考虑的原因
G Skill Intl F4-2800C15-4GVRB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 73

左右 -232% 更低的延时
更快的读取速度，GB/s

17.6 6.3

测试中的平均数值
更快的写入速度，GB/s

13.3 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

G Skill Intl F4-2800C15-4GVRB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 22
读取速度，GB/s

6.3 17.6
写入速度，GB/s

5.2 13.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 3038

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5273DH0-CH9 4GB

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Golden Empire CL15-17-17 D4-2666 8GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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A-DATA Technology AD4S3200316G22-BHYD 16GB

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Samsung M393A1G40DB0-CPB 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Kingston KN2M64-ETB 8GB

Kingston KN2M64-ETB 8GB

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Gloway International (HK) STK4U2400D17041C 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

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Crucial Technology BL16G30C15U4WL.M16FE 16GB

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Corsair CMD32GX4M4C3200C16 8GB

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Avant Technology F641GU67F9333G 8GB

Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB