AMD R5316G1609U2K 8GB vs G Skill Intl F4-3200C16-4GVKB 4GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

G Skill Intl F4-3200C16-4GVKB 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

G Skill Intl F4-3200C16-4GVKB 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GVKB 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 73

左右 -152% 更低的延时
更快的读取速度，GB/s

18 6.3

测试中的平均数值
更快的写入速度，GB/s

13.9 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

G Skill Intl F4-3200C16-4GVKB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 29
读取速度，GB/s

6.3 18.0
写入速度，GB/s

5.2 13.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 3049

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Crucial Technology CT102464BF160B-16F 8GB

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Crucial Technology CT16G4DFD8266.C16FD1 16GB

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Corsair CMWX16GC3000C16W4D 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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V-GEN D4M8GL26A8TS6 8GB

V-GEN D4M8GL26A8TS6 8GB

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A-DATA Technology AD73I1C1674EV 4GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-3200C15-8GTZ 8GB

G Skill Intl F4-3200C15-8GTZ 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB