AMD R5316G1609U2K 8GB vs GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 73

左右 -181% 更低的延时
更快的读取速度，GB/s

19.1 6.3

测试中的平均数值
更快的写入速度，GB/s

15.9 5.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 26
读取速度，GB/s

6.3 19.1
写入速度，GB/s

5.2 15.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1309 3773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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AMD R5316G1609U2K 8GB

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Kingston 9905624-022.A00G 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

Smart Modular SH564128FH8N0QHSCG 4GB

Smart Modular SH564128FH8N0QHSCG 4GB

Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kingston 9905624-051.A00G 8GB

Kingston 9905624-051.A00G 8GB