AMD R5316G1609U2K 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 73

左右 -192% 更低的延时
更快的读取速度，GB/s

14.8 6.3

测试中的平均数值
更快的写入速度，GB/s

8.9 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 25
读取速度，GB/s

6.3 14.8
写入速度，GB/s

5.2 8.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 2542

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

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G Skill Intl F4-3200C15-16GTZ 16GB

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Kingston ACR256X64D3S1333C9 2GB

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SK Hynix HMA84GL7MMR4N-TF 32GB

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