AMD R5316G1609U2K 8GB vs Micron Technology 16ATF1G64AZ-2G1B1 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Micron Technology 16ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 73

左右 -97% 更低的延时
更快的读取速度，GB/s

14.7 6.3

测试中的平均数值
更快的写入速度，GB/s

10.6 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 37
读取速度，GB/s

6.3 14.7
写入速度，GB/s

5.2 10.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 2592

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3800C14-8GTZN 8GB

G Skill Intl F4-3800C14-8GTZN 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Avant Technology J641GU42J5213N0 8GB

Avant Technology J641GU42J5213N0 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3600C19-16GTRS 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CMK8GX4M1D2400C14 8GB

Corsair CMK8GX4M1D2400C14 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston HP24D4U7S8MBP-8 8GB

Kingston HP24D4U7S8MBP-8 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Ramsta Ramsta-2666MHz-4G 4GB

Ramsta Ramsta-2666MHz-4G 4GB

Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

Corsair CM4X4GF2400C14K4 4GB

Corsair CM4X4GF2400C14K4 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston 9905701-018.A00G 16GB

Kingston 9905701-018.A00G 16GB