AMD R534G1601U1S-UO 4GB vs Corsair CM4X16GE2666C16K2 16GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 54

左右 50% 更低的延时
更快的读取速度，GB/s

14.7 10.6

测试中的平均数值
更快的写入速度，GB/s

9.2 6.1

测试中的平均数值

Corsair CM4X16GE2666C16K2 16GB

需要考虑的原因
Corsair CM4X16GE2666C16K2 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

Corsair CM4X16GE2666C16K2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 54
读取速度，GB/s

14.7 10.6
写入速度，GB/s

9.2 6.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2272 2091

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFRA266.C8FE 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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A-DATA Technology DQVE1908 512MB

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Micron Technology 18ADF1G72PZ-2G1A1 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Mushkin MRA4S266GHHF32G 32GB

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A-DATA Technology DOVF1B163G2G 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Apacer Technology 78.C1GS7.DFW0C 8GB

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

G Skill Intl F4-2800C16-8GRK 8GB

G Skill Intl F4-2800C16-8GRK 8GB