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AMD R538G1601U2S 8GB
Hyundai Inc AR32C16S8K2HU416R 8GB

AMD R538G1601U2S 8GB vs Hyundai Inc AR32C16S8K2HU416R 8GB

总分
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分
star star star star star
Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

差异 规格 评论

差异

AMD R538G1601U2S 8GB 需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 20
    左右 5% 更低的延时
Hyundai Inc AR32C16S8K2HU416R 8GB 需要考虑的原因
Hyundai Inc AR32C16S8K2HU416R 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19 left arrow 18.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 12.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S 8GB
Hyundai Inc AR32C16S8K2HU416R 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    19 left arrow 20
  • 读取速度，GB/s
    18.4 left arrow 19.0
  • 写入速度，GB/s
    12.3 left arrow 15.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3189 left arrow 3410

AMD R538G1601U2S 8GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5458-002.A00LF 2GB
Kingston 99U5458-002.A00LF 2GB
Kingston 9905663-008.A00G 16GB
Kingston 9905663-008.A00G 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Chun Well Technology Holding Limited MD4U1632161DCW 16G
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9965589-035.D00G 16GB
Kingston 9965589-035.D00G 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-3600C18-8GTZN 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
Corsair CMK16GX4M4A2666C15 4GB
Corsair CMK16GX4M4A2666C15 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Transcend Information JM3200HLE-32GK 16GB
Transcend Information JM3200HLE-32GK 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMA84GL7AMR4N-UH 32GB
SK Hynix HMA84GL7AMR4N-UH 32GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston KHX3466C16D4/16GX 16GB
Kingston KHX3466C16D4/16GX 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Mushkin MRB4U300GJJM16G 16GB
Mushkin MRB4U300GJJM16G 16GB
内存RAM