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AMD R538G1601U2S-UO 8GB
Crucial Technology CB8GS2400.C8D 8GB

AMD R538G1601U2S-UO 8GB vs Crucial Technology CB8GS2400.C8D 8GB

总分
star star star star star
AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分
star star star star star
Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

差异 规格 评论

差异

AMD R538G1601U2S-UO 8GB 需要考虑的原因
AMD R538G1601U2S-UO 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 89
    左右 71% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.0 left arrow 6.8
    测试中的平均数值
Crucial Technology CB8GS2400.C8D 8GB 需要考虑的原因
Crucial Technology CB8GS2400.C8D 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S-UO 8GB
Crucial Technology CB8GS2400.C8D 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 89
  • 读取速度，GB/s
    14.2 left arrow 13.6
  • 写入速度，GB/s
    10.0 left arrow 6.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2634 left arrow 1518

AMD R538G1601U2S-UO 8GB RAM的比较

Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3200C16-4GRK 4GB

Crucial Technology CB8GS2400.C8D 8GB RAM的比较

G Skill Intl F4-2800C15-4GVR 4GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMZ16GX3M2A1866C9 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C16-16GTZ 16GB
G Skill Intl F4-3200C16-16GTZ 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Lexar Co Limited LD4AS016G-H3200GST 16GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Apacer Technology 78.C1GS7.AUW0B 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3866C18-4GTZ 4GB
G Skill Intl F4-3866C18-4GTZ 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
InnoDisk Corporation 16GB
InnoDisk Corporation 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
内存RAM
Corsair CMT32GX5M2B5600C36 16GB
Corsair CMT32GX5M2B5600C36 16GB
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Panram International Corporation PUD43000C164G2NJK 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston KF2666C13D4/8GX 8GB
Kingston KF2666C13D4/8GX 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Golden Empire CL17-17-17 D4-2400 16GB
Golden Empire CL17-17-17 D4-2400 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
内存RAM