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AMD R5S38G1601U2S 8GB
Patriot Memory (PDP Systems) PSD44G213341 4GB

AMD R5S38G1601U2S 8GB vs Patriot Memory (PDP Systems) PSD44G213341 4GB

总分
star star star star star
AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD44G213341 4GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

差异 规格 评论

差异

AMD R5S38G1601U2S 8GB 需要考虑的原因
AMD R5S38G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 71
    左右 48% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 6.5
    测试中的平均数值
Patriot Memory (PDP Systems) PSD44G213341 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD44G213341 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R5S38G1601U2S 8GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 71
  • 读取速度，GB/s
    15.4 left arrow 15.0
  • 写入速度，GB/s
    9.2 left arrow 6.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2581 left arrow 1616

AMD R5S38G1601U2S 8GB RAM的比较

Kingston KHX1866C9D3/8GX 8GB
AMD R538G1601U2S 8GB

Patriot Memory (PDP Systems) PSD44G213341 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Kingston 9905702-135.A00G 8GB
Kingston 9905702-135.A00G 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C16-8GTZRX 8GB
G Skill Intl F4-3200C16-8GTZRX 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMR16GX4M2C3000C16 8GB
Corsair CMR16GX4M2C3000C16 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston KHX3300C16D4/4GX 4GB
Kingston KHX3300C16D4/4GX 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
INTENSO 5641162 8GB
INTENSO 5641162 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Apacer Technology GD2.111881.002 4GB
Apacer Technology GD2.111881.002 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-8GTZRN 8GB
G Skill Intl F4-3200C16-8GTZRN 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston KHX2400C15/8G 8GB
Kingston KHX2400C15/8G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4SFD8266 16GB
Crucial Technology CT16G4SFD8266 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
内存RAM