RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Apacer Technology 76.D105G.D090B 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
比较
Apacer Technology 76.D105G.D090B 16GB vs Patriot Memory (PDP Systems) 2666 C18 Series 16GB
总分
Apacer Technology 76.D105G.D090B 16GB
总分
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
差异
规格
评论
差异
需要考虑的原因
Apacer Technology 76.D105G.D090B 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
32
左右 28% 更低的延时
更快的读取速度,GB/s
17.9
15.4
测试中的平均数值
更快的写入速度,GB/s
13.3
12.2
测试中的平均数值
需要考虑的原因
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Apacer Technology 76.D105G.D090B 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
23
32
读取速度,GB/s
17.9
15.4
写入速度,GB/s
13.3
12.2
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3241
2933
Apacer Technology 76.D105G.D090B 16GB RAM的比较
Kingston KHX2666C16D4/16GX 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Apacer Technology 76.D105G.D090B 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMD16GX4M4B3000C14 4GB
Samsung M378B5173EB0-CK0 4GB
Crucial Technology CT8G4SFS824A.M8FB 8GB
Corsair CM5S16GM4800A40K2 16GB
Kingston MSI24D4S7D8MHMH6 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB
Corsair VSA2GSDS667C4 2GB
Corsair CMK16GX4M2Z2666C16 8GB
TwinMOS 8DHE3MN8-HATP 2GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
Samsung M393B5270CH0-CH9 4GB
Samsung M474A4G43MB1-CTD 32GB
PUSKILL DDR3 1600 8G 8GB
Kingston KKRVFX-MIE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP26D4S9S8MH-8 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-2400C14-16GRK 16GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-3600C17-8GVK 8GB
报告一个错误
×
Bug description
Source link