ASint Technology SSA302G08-EGN1C 4GB vs Kingston ACR26D4U9D8MH-16 16GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

Kingston ACR26D4U9D8MH-16 16GB

Kingston ACR26D4U9D8MH-16 16GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

更快的写入速度，GB/s

9.5 9.2

测试中的平均数值

Kingston ACR26D4U9D8MH-16 16GB

需要考虑的原因
Kingston ACR26D4U9D8MH-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 -4% 更低的延时
更快的读取速度，GB/s

16.3 12.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

Kingston ACR26D4U9D8MH-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 25
读取速度，GB/s

12.6 16.3
写入速度，GB/s

9.5 9.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2174 2614

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HMAA4GU6AJR8N-XN 32GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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AMD AE34G1601U1 4GB

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Crucial Technology BLS16G4D240FSE.16FAD 16GB

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Corsair CML8GX3M2A1866C9 4GB

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SK Hynix HMA451R7AFR8N-UH 4GB

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Kingston KHX1866C9D3/8GX 8GB

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Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

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A-DATA Technology VDQVE1B16 2GB

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Crucial Technology CT8G4SFS8213.M8FA 8GB

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Kingston KHX16 4GB

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Mushkin MR[ABC]4U320GJJM16G 16GB

Mushkin MR[ABC]4U320GJJM16G 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CMK8GX4M2B3866C18 4GB

Corsair CMK8GX4M2B3866C18 4GB

Samsung M393B1G70BH0-CK0 8GB

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G Skill Intl F4-2666C15-8GVR 8GB

G Skill Intl F4-2666C15-8GVR 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

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