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ASint Technology SSA302G08-EGN1C 4GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB

ASint Technology SSA302G08-EGN1C 4GB vs Lexar Co Limited LD4BU008G-H3200ULH 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 32
    左右 19% 更低的延时
Lexar Co Limited LD4BU008G-H3200ULH 8GB 需要考虑的原因
Lexar Co Limited LD4BU008G-H3200ULH 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.6 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 32
  • 读取速度，GB/s
    12.6 left arrow 20.6
  • 写入速度，GB/s
    9.5 left arrow 14.7
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 3393

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kingston 9905403-061.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
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内存RAM
Samsung M471B5773CHS-CH9 2GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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