Corsair CM3X8GA2400C11Y2R 8GB vs Corsair CMD8GX4M2B4000C19 4GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Corsair CMD8GX4M2B4000C19 4GB

Corsair CMD8GX4M2B4000C19 4GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

Corsair CMD8GX4M2B4000C19 4GB

需要考虑的原因
Corsair CMD8GX4M2B4000C19 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 20

左右 -11% 更低的延时
更快的读取速度，GB/s

21.4 19.1

测试中的平均数值
更快的写入速度，GB/s

18.5 13.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CMD8GX4M2B4000C19 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 18
读取速度，GB/s

19.1 21.4
写入速度，GB/s

13.1 18.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3252 3625

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A1K43EB2-CVF 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston K821PJ-MID 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Micron Technology 16ATF2G64HZ-2G3E1 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

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G Skill Intl F4-3200C14-32GTRG 32GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

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Crucial Technology CT16G4SFD8213.C16FH1 16GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Apacer Technology 78.D1GS7.B7B0B 16GB

Apacer Technology 78.D1GS7.B7B0B 16GB