Corsair CML8GX3M2A1866C9 4GB vs Crucial Technology BL16G32C16S4B.M8FB1 16GB

总分

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

差异规格评论

差异

Corsair CML8GX3M2A1866C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB

报告一个错误

Crucial Technology BL16G32C16S4B.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G32C16S4B.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 -31% 更低的延时
更快的读取速度，GB/s

17.2 14.1

测试中的平均数值
更快的写入速度，GB/s

14.2 8.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1866C9 4GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 29
读取速度，GB/s

14.1 17.2
写入速度，GB/s

8.7 14.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2228 3461

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

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Kingston ACR256X64D3S1333C9 2GB

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB