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Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-3000C15-8GRKB 8GB

Corsair CMSX4GX3M1A1600C9 4GB vs G Skill Intl F4-3000C15-8GRKB 8GB

总分
star star star star star
Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分
star star star star star
G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-3000C15-8GRKB 8GB

差异 规格 评论

差异

Corsair CMSX4GX3M1A1600C9 4GB 需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB
报告一个错误
G Skill Intl F4-3000C15-8GRKB 8GB 需要考虑的原因
G Skill Intl F4-3000C15-8GRKB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 38
    左右 -90% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-3000C15-8GRKB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 20
  • 读取速度，GB/s
    12.8 left arrow 18.9
  • 写入速度，GB/s
    9.1 left arrow 15.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2099 left arrow 3281

Corsair CMSX4GX3M1A1600C9 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3000C15-8GRKB 8GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Mushkin 99[2/7/4]191F 4GB
Mushkin 99[2/7/4]191F 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Samsung M378A5244CB0-CWE 4GB
Samsung M378A5244CB0-CWE 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C19-16GTRG 16GB
G Skill Intl F4-4000C19-16GTRG 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CM4X4GF2400C16K4 4GB
Corsair CM4X4GF2400C16K4 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9905713-008.A00G 4GB
Kingston 9905713-008.A00G 4GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9965589-008.D02G 8GB
Kingston 9965589-008.D02G 8GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C16-16GTZSW 16GB
G Skill Intl F4-3200C16-16GTZSW 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
内存RAM
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Corsair CMT16GX4M2C3000C15 8GB
Corsair CMT16GX4M2C3000C15 8GB
内存RAM