Corsair CMX4GX3M1A1333C9 4GB vs Hyundai Inc AR36C18S8K2HU416R 8GB

总分

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

总分

Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

差异规格评论

差异

Corsair CMX4GX3M1A1333C9 4GB

需要考虑的原因
Corsair CMX4GX3M1A1333C9 4GB

报告一个错误

Hyundai Inc AR36C18S8K2HU416R 8GB

需要考虑的原因
Hyundai Inc AR36C18S8K2HU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 40

左右 -111% 更低的延时
更快的读取速度，GB/s

20 12.8

测试中的平均数值
更快的写入速度，GB/s

17.5 7.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M1A1333C9 4GB

Hyundai Inc AR36C18S8K2HU416R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 19
读取速度，GB/s

12.8 20.0
写入速度，GB/s

7.0 17.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2021 3499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingmax Semiconductor GLLG42F-18---------- 8GB

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Corsair CMK32GX4M4B3333C16 8GB

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Micron Technology 8ATF2G64HZ-3G2B2 16GB

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Crucial Technology CT8G4DFRA266.C8FJ 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMW64GX4M8Z2933C16 8GB

Corsair CMW64GX4M8Z2933C16 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston 99U5700-027.A00G 8GB

Kingston 99U5700-027.A00G 8GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB