Corsair CMZ16GX3M2A1866C9 8GB vs G Skill Intl F4-4000C19-4GTZ 4GB

总分

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分

G Skill Intl F4-4000C19-4GTZ 4GB

G Skill Intl F4-4000C19-4GTZ 4GB

差异规格评论

差异

Corsair CMZ16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB

报告一个错误

G Skill Intl F4-4000C19-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-4000C19-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 39

左右 -95% 更低的延时
更快的读取速度，GB/s

19.4 14

测试中的平均数值
更快的写入速度，GB/s

15.0 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A1866C9 8GB

G Skill Intl F4-4000C19-4GTZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 20
读取速度，GB/s

14.0 19.4
写入速度，GB/s

9.0 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2489 3217

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

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Kingston KF3200C16D4/16GX 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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G Skill Intl F5-6400J3239G16G 16GB

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SK Hynix HMT451U7BFR8C-RD 4GB

Patriot Memory (PDP Systems) PSD48G213381S 8GB

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Kingston KF3200C16D4/8GX 8GB

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Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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