Corsair CMZ16GX3M2A2400C10 8GB vs Chun Well Technology Holding Limited MD4U0836165BCW 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U0836165BCW 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 37

左右 -19% 更低的延时
更快的读取速度，GB/s

21.4 11.4

测试中的平均数值
更快的写入速度，GB/s

16.2 7.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 31
读取速度，GB/s

11.4 21.4
写入速度，GB/s

7.4 16.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1683 3809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMG64GX4M2D3600C18 32GB

Corsair CMG64GX4M2D3600C18 32GB

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Samsung M471B1G73QH0-YK0 8GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CM4X4GF2400C16S2 4GB

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Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F4-3600C15-8GTZ 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-2400C17-8GSXW 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX2666C16S4/16G 16GB

Kingston KHX2666C16S4/16G 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-4000C17-8GTZR 8GB

G Skill Intl F4-4000C17-8GTZR 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston KHX2400C12D4/8GX 8GB

Kingston KHX2400C12D4/8GX 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CM4X8GD3000C16K4D 8GB

Corsair CM4X8GD3000C16K4D 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

G Skill Intl F4-2800C16-8GVR 8GB

G Skill Intl F4-2800C16-8GVR 8GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Corsair CM4X16GE2400C16K4 16GB

Corsair CM4X16GE2400C16K4 16GB