Corsair CMZ16GX3M2A2400C10 8GB vs Corsair CMD64GX4M8A2666C15 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Corsair CMD64GX4M8A2666C15 8GB

Corsair CMD64GX4M8A2666C15 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 39

左右 5% 更低的延时

Corsair CMD64GX4M8A2666C15 8GB

需要考虑的原因
Corsair CMD64GX4M8A2666C15 8GB

报告一个错误

更快的读取速度，GB/s

13.7 11.4

测试中的平均数值
更快的写入速度，GB/s

11.9 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMD64GX4M8A2666C15 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 39
读取速度，GB/s

11.4 13.7
写入速度，GB/s

7.4 11.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 3018

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Kingston 99U5469-045.A00LF 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

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Kingston 9965525-155.A00LF 8GB

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Patriot Memory (PDP Systems) PSD416G32002 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Crucial Technology CT8G4SFS824A.C8FAD1 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M471A2K43CB1-CRCR 16GB