Corsair VS1GB800D2 1GB vs Crucial Technology CT8G4DFS824A.C8FHD1 8GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.C8FHD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 47

左右 -42% 更低的延时
更快的写入速度，GB/s

11.1 1,361.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 33
读取速度，GB/s

4,680.7 15.5
写入速度，GB/s

1,361.1 11.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

460 2854

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3200C16-16GSXKB 16GB

G Skill Intl F4-3200C16-16GSXKB 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Corsair CML16GX3M2A1600C10 8GB

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Crucial Technology CT8G4DFD824A.M16FB 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Samsung M378A2G43AB3-CWE 16GB