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Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3600C19-8GSXKB 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB vs G Skill Intl F4-3600C19-8GSXKB 8GB

总分
star star star star star
Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分
star star star star star
G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

差异 规格 评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB 需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB
报告一个错误
G Skill Intl F4-3600C19-8GSXKB 8GB 需要考虑的原因
G Skill Intl F4-3600C19-8GSXKB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 34
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    18.6 left arrow 16.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3600C19-8GSXKB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 28
  • 读取速度，GB/s
    16.2 left arrow 18.6
  • 写入速度，GB/s
    9.7 left arrow 15.4
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2636 left arrow 3519

Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM的比较

Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB

G Skill Intl F4-3600C19-8GSXKB 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5403-492.A00LF 8GB
Kingston 99U5403-492.A00LF 8GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Mushkin MR[A/B]4U320LLLM8G 8GB
Mushkin MR[A/B]4U320LLLM8G 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMV8GX4M1A2133C15 8GB
Corsair CMV8GX4M1A2133C15 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3866C18-8GTZ 8GB
G Skill Intl F4-3866C18-8GTZ 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Mushkin MR[A/B]4U320GJJM8G 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology DDR4 3333 2OZ 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Corsair CM4X8GF2400Z16K4 8GB
Corsair CM4X8GF2400Z16K4 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston 9965596-002.B00G 4GB
Kingston 9965596-002.B00G 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905678-033.A00G 4GB
Kingston 9905678-033.A00G 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905663-030.A00G 16GB
Kingston 9905663-030.A00G 16GB
内存RAM