Crucial Technology BLT2G3D1608DT1TX0 2GB vs Crucial Technology BL16G26C16U4R.16FE 16GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 29

左右 21% 更低的延时

Crucial Technology BL16G26C16U4R.16FE 16GB

需要考虑的原因
Crucial Technology BL16G26C16U4R.16FE 16GB

报告一个错误

更快的读取速度，GB/s

17.1 13.6

测试中的平均数值
更快的写入速度，GB/s

13.0 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BL16G26C16U4R.16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 29
读取速度，GB/s

13.6 17.1
写入速度，GB/s

9.4 13.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2096 3384

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

Corsair CMT16GX4M2C3000C15 8GB

Corsair CMT16GX4M2C3000C15 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Kingston K821PJ-MIH 16GB

Kingston K821PJ-MIH 16GB