Crucial Technology BLT2G3D1608DT1TX0 2GB vs Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 15% 更低的延时

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

报告一个错误

更快的读取速度，GB/s

17.3 13.6

测试中的平均数值
更快的写入速度，GB/s

13.0 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 27
读取速度，GB/s

13.6 17.3
写入速度，GB/s

9.4 13.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2096 2735

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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Samsung M378B5773DH0-CH9 2GB

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Corsair CMK32GX4M4B3200C14 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Transcend Information JM3200HLE-32G 32GB

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