Crucial Technology BLT2G3D1608DT1TX0 2GB vs EVGA 16G-D4-2400-MR 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 30

左右 23% 更低的延时

EVGA 16G-D4-2400-MR 8GB

需要考虑的原因
EVGA 16G-D4-2400-MR 8GB

报告一个错误

更快的读取速度，GB/s

17.9 13.6

测试中的平均数值
更快的写入速度，GB/s

13.3 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

EVGA 16G-D4-2400-MR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 30
读取速度，GB/s

13.6 17.9
写入速度，GB/s

9.4 13.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2096 3226

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung SF4641G8CKHI6DFSDS 8GB

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AMD AE34G2139U2 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMK8GX4M2A2400C14 4GB

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SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

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Kingston XK2M26-MIE 16GB

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Corsair CMW32GX4M2C3000C15 16GB

Corsair CMW32GX4M2C3000C15 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

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Team Group Inc. Team-Elite-1333 4GB

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Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Apacer Technology GD2.11173T.001 4GB

Apacer Technology GD2.11173T.001 4GB