Crucial Technology BLT2G3D1608DT1TX0 2GB vs Samsung M393A4K40CB1-CRC 32GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Samsung M393A4K40CB1-CRC 32GB

Samsung M393A4K40CB1-CRC 32GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 48

左右 52% 更低的延时
更快的读取速度，GB/s

13.6 10.9

测试中的平均数值
更快的写入速度，GB/s

9.4 8.1

测试中的平均数值

Samsung M393A4K40CB1-CRC 32GB

需要考虑的原因
Samsung M393A4K40CB1-CRC 32GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Samsung M393A4K40CB1-CRC 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 48
读取速度，GB/s

13.6 10.9
写入速度，GB/s

9.4 8.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2096 2496

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

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G Skill Intl F4-2800C16-8GVG 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston 9965669-017.A00G 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-2666C18-16GRS 16GB

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Kingston KVR16N11/8-SP 8GB

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Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

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Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston CAC24D4S7D8MB-16 16GB

Kingston CAC24D4S7D8MB-16 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

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Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB