Crucial Technology CT102464BF160B.C16 8GB vs Gloway International (HK) STK4U2400D17161C 16GB

总分

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分

Gloway International (HK) STK4U2400D17161C 16GB

Gloway International (HK) STK4U2400D17161C 16GB

差异规格评论

差异

Crucial Technology CT102464BF160B.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 67

左右 34% 更低的延时
更快的写入速度，GB/s

8.6 8.2

测试中的平均数值

Gloway International (HK) STK4U2400D17161C 16GB

需要考虑的原因
Gloway International (HK) STK4U2400D17161C 16GB

报告一个错误

更快的读取速度，GB/s

15.3 12.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.C16 8GB

Gloway International (HK) STK4U2400D17161C 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 67
读取速度，GB/s

12.6 15.3
写入速度，GB/s

8.6 8.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2193 2042

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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EVGA 16G-D4-2666-MR 4GB

EVGA 16G-D4-2666-MR 4GB

Kingston 9905403-437.A01LF 4GB

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AMD R948G3206U2S 8GB

AMD R948G3206U2S 8GB

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

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