Crucial Technology CT25664AA800.M16FM 2GB vs Crucial Technology CT8G4DFS8213.C8FDD1 8GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

更快的读取速度，GB/s

5 17.3

测试中的平均数值
更快的写入速度，GB/s

2,135.0 10.8

测试中的平均数值

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FDD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 51

左右 -76% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 29
读取速度，GB/s

5,021.4 17.3
写入速度，GB/s

2,135.0 10.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

855 3111

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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Kingston KH280C14D4/8X 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

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Samsung M4 70T2864QZ3-CF7 1GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N