Crucial Technology CT51264BA1339.C16F 4GB vs Corsair CM4X16GE2666C16K2 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 54

左右 50% 更低的延时
更快的读取速度，GB/s

13.9 10.6

测试中的平均数值
更快的写入速度，GB/s

8.4 6.1

测试中的平均数值

Corsair CM4X16GE2666C16K2 16GB

需要考虑的原因
Corsair CM4X16GE2666C16K2 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CM4X16GE2666C16K2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 54
读取速度，GB/s

13.9 10.6
写入速度，GB/s

8.4 6.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 2091

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

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Kingston 9965433-034.A00LF 4GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-2666C18-32GRS 32GB

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Gloway International (HK) STK4U2400D17082C 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston HP32D4U8S8HC-8XR 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB