Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology CT16G4DFD8266.C16FJ 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时

Crucial Technology CT16G4DFD8266.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FJ 16GB

报告一个错误

更快的读取速度，GB/s

15.6 13.9

测试中的平均数值
更快的写入速度，GB/s

12.5 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

13.9 15.6
写入速度，GB/s

8.4 12.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2251 3060

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HMA81GS6DJR8N-XN 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

Samsung M3 78T5663RZ3-CF7 2GB

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Kingston KV0M5R-MIE 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingmax Semiconductor GLLF62F-C6---------- 4GB