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Crucial Technology CT51264BA1339.C16F 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB

Crucial Technology CT51264BA1339.C16F 4GB vs Samsung V-GeN D4S8GL26A8TL5 8GB

总分
star star star star star
Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分
star star star star star
Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
Samsung V-GeN D4S8GL26A8TL5 8GB 需要考虑的原因
Samsung V-GeN D4S8GL26A8TL5 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 27
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 22
  • 读取速度，GB/s
    13.9 left arrow 18.0
  • 写入速度，GB/s
    8.4 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2251 left arrow 3110

Crucial Technology CT51264BA1339.C16F 4GB RAM的比较

Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB

Samsung V-GeN D4S8GL26A8TL5 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
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Kingmax Semiconductor GLLH22F-18---------- 16GB
内存RAM
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内存RAM
Samsung M471B5673FH0-CF8 2GB
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Team Group Inc. TEAMGROUP-SD4-2666 16GB
内存RAM
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Corsair CMZ16GX3M2A2400C10 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2666C18-16GRS 16GB
G Skill Intl F4-2666C18-16GRS 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
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Samsung M378A2K43DB1-CVF 16GB
内存RAM
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Corsair CMD8GX3M2A2933C12 4GB
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
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Kingston 9905712-035.A00G 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
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内存RAM
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PNY Electronics PNY 2GB
G Skill Intl F4-4400C16-8GTRS 8GB
G Skill Intl F4-4400C16-8GTRS 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M393A5143DB0-CRC 4GB
Samsung M393A5143DB0-CRC 4GB
内存RAM