Crucial Technology CT51264BA1339.D16F 4GB vs Crucial Technology BLS16G4D30AESE.M16FE 16GB

总分

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.D16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB

报告一个错误

Crucial Technology BLS16G4D30AESE.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D30AESE.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

17.6 13.2

测试中的平均数值
更快的写入速度，GB/s

13.3 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

13.2 17.6
写入速度，GB/s

8.2 13.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2165 3446

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung DDR3 8GB 1600MHz 8GB

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Samsung M471A1K43DB1-CTD 8GB

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Kingston HP16D3LS1KBGH/4G 4GB

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Ramsta Ramsta-2666MHz-4G 4GB

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Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

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Kingston 9905471-071.A00LF 8GB

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G Skill Intl F4-3600C15-8GTZ 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3300C16-4GRKD 4GB

G Skill Intl F4-3300C16-4GRKD 4GB