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Crucial Technology CT51264BA160B.C16F 4GB
Corsair CMD8GX4M2B4000C19 4GB

Crucial Technology CT51264BA160B.C16F 4GB vs Corsair CMD8GX4M2B4000C19 4GB

总分
star star star star star
Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

总分
star star star star star
Corsair CMD8GX4M2B4000C19 4GB

Corsair CMD8GX4M2B4000C19 4GB

差异 规格 评论

差异

Crucial Technology CT51264BA160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BA160B.C16F 4GB
报告一个错误
Corsair CMD8GX4M2B4000C19 4GB 需要考虑的原因
Corsair CMD8GX4M2B4000C19 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 41
    左右 -128% 更低的延时
  • 更快的读取速度，GB/s
    21.4 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.5 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA160B.C16F 4GB
Corsair CMD8GX4M2B4000C19 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 18
  • 读取速度，GB/s
    14.3 left arrow 21.4
  • 写入速度，GB/s
    9.4 left arrow 18.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2142 left arrow 3625

Crucial Technology CT51264BA160B.C16F 4GB RAM的比较

SK Hynix HMT351U6CFR8C-PB 4GB
Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMD8GX4M2B4000C19 4GB RAM的比较

Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston 9905584-016.A00LF 4GB
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内存RAM