Crucial Technology CT51264BD1339.M16F 4GB vs Kingmax Semiconductor GLNG43F-18---------- 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Kingmax Semiconductor GLNG43F-18---------- 8GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 64

左右 61% 更低的延时

Kingmax Semiconductor GLNG43F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GLNG43F-18---------- 8GB

报告一个错误

更快的读取速度，GB/s

16.6 12.1

测试中的平均数值
更快的写入速度，GB/s

8.8 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 64
读取速度，GB/s

12.1 16.6
写入速度，GB/s

8.6 8.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 2065

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1K43BB2-CTD 8GB

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Micron Technology 36ASF4G72PZ-2G3D1 32GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA451R7MFR8N-TFTD 4GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Kingston KHX1600C9D3/8G 8GB

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