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Crucial Technology CT51264BD1339.M16F 4GB
Super Talent F24EB8GS 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs Super Talent F24EB8GS 8GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 31
    左右 19% 更低的延时
Super Talent F24EB8GS 8GB 需要考虑的原因
Super Talent F24EB8GS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Super Talent F24EB8GS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 31
  • 读取速度，GB/s
    12.1 left arrow 16.2
  • 写入速度，GB/s
    8.6 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 13 14 15 16 17
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 3017

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

Super Talent F24EB8GS 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
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Crucial Technology CT32G4SFD832A.M16FB 32GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingston 9965604-008.D00G 16GB
Kingston 9965604-008.D00G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Super Talent F24EB8GS 8GB
Super Talent F24EB8GS 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M378A4G43AB2-CVF 32GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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Crucial Technology CT16G4DFRA266.C16FP 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
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Heoriady M378A1K43BB2-CTD 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Corsair CMK16GX4M2K4000C19 8GB
Corsair CMK16GX4M2K4000C19 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Panram International Corporation PUD43000C168G2NJR 8GB
Panram International Corporation PUD43000C168G2NJR 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Apacer Technology 78.C2GFA.AF30B 8GB
Apacer Technology 78.C2GFA.AF30B 8GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
G Skill Intl F4-3200C16-16GTZKY 16GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
Corsair CMD16GX4M2B3600C18 8GB
Corsair CMD16GX4M2B3600C18 8GB
内存RAM