Crucial Technology CT51264BD160B.C16F 4GB vs Smart Modular SMS4TDC3C0K0446SCG 4GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Smart Modular SMS4TDC3C0K0446SCG 4GB

需要考虑的原因
Smart Modular SMS4TDC3C0K0446SCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 41

左右 -5% 更低的延时
更快的读取速度，GB/s

14.3 13.9

测试中的平均数值
更快的写入速度，GB/s

10.8 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 39
读取速度，GB/s

13.9 14.3
写入速度，GB/s

9.7 10.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2366 2159

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F4-4266C19-8GTRS 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

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A-DATA Technology ADOVE1A0834E 1GB

Kingston 9905734-059.A00G 16GB

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Kingston 99P5471-002.A00LF 2GB

Kingston XJ69DF-MIE 8GB

Kingston XJ69DF-MIE 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

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A-DATA Technology 11137401 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

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Apacer Technology 78.C1GQ5.C7C0B 8GB