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Crucial Technology CT51264BF160B.M16F 4GB
Samsung M471A2K43DB1-CTD 16GB

Crucial Technology CT51264BF160B.M16F 4GB vs Samsung M471A2K43DB1-CTD 16GB

总分
star star star star star
Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

总分
star star star star star
Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

差异 规格 评论

差异

Crucial Technology CT51264BF160B.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 20% 更低的延时
Samsung M471A2K43DB1-CTD 16GB 需要考虑的原因
Samsung M471A2K43DB1-CTD 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.2 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BF160B.M16F 4GB
Samsung M471A2K43DB1-CTD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 35
  • 读取速度，GB/s
    11.8 left arrow 15.2
  • 写入速度，GB/s
    8.2 left arrow 10.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 2773

Crucial Technology CT51264BF160B.M16F 4GB RAM的比较

Samsung M471B5173QH0-YK0 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB

Samsung M471A2K43DB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
Samsung M471A2K43DB1-CTD 16GB
Samsung M471A2K43DB1-CTD 16GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Kingston HP28D4S7D8HA-16X 16GB
Kingston HP28D4S7D8HA-16X 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965600-027.A01G 16GB
Kingston 9965600-027.A01G 16GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3600C14-8GTZRA 8GB
G Skill Intl F4-3600C14-8GTZRA 8GB
内存RAM
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
Corsair CMD32GX4M4B3000C15 8GB
Corsair CMD32GX4M4B3000C15 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Essencore Limited KD4AGU880-32A160X 16GB
Essencore Limited KD4AGU880-32A160X 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3333C16-8GVR 8GB
G Skill Intl F4-3333C16-8GVR 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3600C17-16GTZKW 16GB
G Skill Intl F4-3600C17-16GTZKW 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M4B3866C18 8GB
Corsair CMK32GX4M4B3866C18 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA82GR7JJR8N-VK 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMD32GX4M4B3333C16 8GB
Corsair CMD32GX4M4B3333C16 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Corsair CMR32GX4M2D3000C16 16GB
Corsair CMR32GX4M2D3000C16 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Gloway International (HK) STKD4XMP2400-F 4GB
Gloway International (HK) STKD4XMP2400-F 4GB
内存RAM