Elpida EBJ10UE8BAFA-AE-E 1GB vs G Skill Intl F4-4266C17-16GVKB 16GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

G Skill Intl F4-4266C17-16GVKB 16GB

G Skill Intl F4-4266C17-16GVKB 16GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

G Skill Intl F4-4266C17-16GVKB 16GB

需要考虑的原因
G Skill Intl F4-4266C17-16GVKB 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 65

左右 -171% 更低的延时
更快的读取速度，GB/s

21.1 6.1

测试中的平均数值
更快的写入速度，GB/s

19.8 4.2

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

G Skill Intl F4-4266C17-16GVKB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 24
读取速度，GB/s

6.1 21.1
写入速度，GB/s

4.2 19.8
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

985 4394

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SH564128FH8NZQNSCG 4GB

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Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

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Samsung M395T2863QZ4-CF76 1GB

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A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB