Elpida EBJ17RG4EFWA-DJ-F 16GB vs G Skill Intl F4-3600C18-8GTRS 8GB

总分

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

总分

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

差异规格评论

差异

Elpida EBJ17RG4EFWA-DJ-F 16GB

需要考虑的原因
Elpida EBJ17RG4EFWA-DJ-F 16GB

报告一个错误

G Skill Intl F4-3600C18-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-3600C18-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 54

左右 -93% 更低的延时
更快的读取速度，GB/s

18.6 9.4

测试中的平均数值
更快的写入速度，GB/s

15.8 6.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Elpida EBJ17RG4EFWA-DJ-F 16GB

G Skill Intl F4-3600C18-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 28
读取速度，GB/s

9.4 18.6
写入速度，GB/s

6.7 15.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1929 3716

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4DFD832A.C16FP 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M3 78T2863QZS-CF7 1GB

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Micron Technology 4ATF1G64HZ-3G2B2 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-3333C16-8GVK 8GB

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Corsair CMD8GX3M2A2933C12 4GB

INTENSO 5641160 8GB

INTENSO 5641160 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Kingston X5H5PW-MIE 8GB

Kingston X5H5PW-MIE 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB

Kingmax Semiconductor KSCE88F-B8MO5 2GB

Kingmax Semiconductor KSCE88F-B8MO5 2GB

Corsair CMR16GX4M2C3600C18 8GB

Corsair CMR16GX4M2C3600C18 8GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB