Elpida EBJ40EG8BFWB-JS-F 4GB vs Hyundai Inc GR26C16S8K2HU416 8GB

总分

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

总分

Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB

差异规格评论

差异

Elpida EBJ40EG8BFWB-JS-F 4GB

需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB

报告一个错误

Hyundai Inc GR26C16S8K2HU416 8GB

需要考虑的原因
Hyundai Inc GR26C16S8K2HU416 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

17.4 13.9

测试中的平均数值
更快的写入速度，GB/s

13.6 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 14200

左右 1.5 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40EG8BFWB-JS-F 4GB

Hyundai Inc GR26C16S8K2HU416 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

13.9 17.4
写入速度，GB/s

9.6 13.6
内存带宽，mbps

14200 21300

Other

描述

PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2558 3182

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1K43EB2-CWE 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Micron Technology 18ASF1G72PZ-2G1AV 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9905403-515.A00LF 8GB

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Ramsta Ramsta-2666MHz-4G 4GB