Essencore Limited KD48GU88C-26N1600 8GB vs G Skill Intl F4-4266C17-8GTZR 8GB

总分

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

总分

G Skill Intl F4-4266C17-8GTZR 8GB

G Skill Intl F4-4266C17-8GTZR 8GB

差异规格评论

差异

Essencore Limited KD48GU88C-26N1600 8GB

需要考虑的原因
Essencore Limited KD48GU88C-26N1600 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 32

左右 44% 更低的延时
更快的读取速度，GB/s

20.5 17.1

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

G Skill Intl F4-4266C17-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4266C17-8GTZR 8GB

报告一个错误

更快的写入速度，GB/s

16.6 16.4

测试中的平均数值

规格

完整的技术规格清单

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-4266C17-8GTZR 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

18 32
读取速度，GB/s

20.5 17.1
写入速度，GB/s

16.4 16.6
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3530 3742

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2133C15-8GRR 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-4266C17-8GTZR 8GB

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Samsung M471B5273CH0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CM4X8GE2666C16K4 8GB

Corsair CM4X8GE2666C16K4 8GB

Samsung 1600 CL10 Series 8GB

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Chun Well Technology Holding Limited D4U0832160B 8GB

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Crucial Technology CT16G4SFS832A.M8FE 16GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

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