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EVGA 16G-D3-1600-MR 8GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB

EVGA 16G-D3-1600-MR 8GB vs Crucial Technology BLS4G4D240FSB.8FADG 4GB

总分
star star star star star
EVGA 16G-D3-1600-MR 8GB

EVGA 16G-D3-1600-MR 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSB.8FADG 4GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB

差异 规格 评论

差异

EVGA 16G-D3-1600-MR 8GB 需要考虑的原因
EVGA 16G-D3-1600-MR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 34
    左右 3% 更低的延时
Crucial Technology BLS4G4D240FSB.8FADG 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FADG 4GB
报告一个错误
  • 更快的写入速度，GB/s
    11.2 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
EVGA 16G-D3-1600-MR 8GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 34
  • 读取速度，GB/s
    14.3 left arrow 14.3
  • 写入速度，GB/s
    9.1 left arrow 11.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2667 left arrow 2699

EVGA 16G-D3-1600-MR 8GB RAM的比较

Samsung M378B1G73BH0-CK0 8GB
EVGA 16G-D4-2666-MR 4GB

Crucial Technology BLS4G4D240FSB.8FADG 4GB RAM的比较

TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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