G Skill Intl F2-5300CL4-1GBSA 1GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

G Skill Intl F2-5300CL4-1GBSA 1GB vs Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 52

左右 -68% 更低的延时
更快的写入速度，GB/s

14.6 1,479.2

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 31
读取速度，GB/s

4,226.4 16.7
写入速度，GB/s

1,479.2 14.6
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

590 3509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Kingston KF3600C18D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-2400C15-8GVB 8GB

G Skill Intl F4-2400C15-8GVB 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

A-DATA Technology DDR4 3600 8GB

A-DATA Technology DDR4 3600 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Apacer Technology 76.C102G.D170B 8GB

Apacer Technology 76.C102G.D170B 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4266C19-8GTZR 8GB

G Skill Intl F4-4266C19-8GTZR 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Terabyte Co Ltd RCX2-16G3000R 8GB

Terabyte Co Ltd RCX2-16G3000R 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Apacer Technology 76.D305G.D390B 16GB

Apacer Technology 76.D305G.D390B 16GB