G Skill Intl F2-5300CL4-1GBSA 1GB vs Micron Technology 18ASF1G72PDZ-2G6B1 8GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 11.2

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G6B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 52

左右 -73% 更低的延时
更快的写入速度，GB/s

7.9 1,479.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 30
读取速度，GB/s

4,226.4 11.2
写入速度，GB/s

1,479.2 7.9
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

590 2266

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited KD48GS88J-26N1900 8GB

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Crucial Technology CT8G4DFRA266.C8FB 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Samsung M393B2G70BH0-CH9 16GB

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Kllisre 99P5428-002.A00LF 8GB

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G Skill Intl F4-4133C19-8GTZKW 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CML8GX3M2A1866C9 4GB

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G Skill Intl F4-2133C15-4GVK 4GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB