RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMSX8GX4M2A2666C18 4GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Corsair CMSX8GX4M2A2666C18 4GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Corsair CMSX8GX4M2A2666C18 4GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
17.6
测试中的平均数值
更快的写入速度,GB/s
2,935.8
12.9
测试中的平均数值
需要考虑的原因
Corsair CMSX8GX4M2A2666C18 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
45
左右 -50% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMSX8GX4M2A2666C18 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
30
读取速度,GB/s
6,336.8
17.6
写入速度,GB/s
2,935.8
12.9
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1144
2460
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Corsair CMSX8GX4M2A2666C18 4GB RAM的比较
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F2-5300CL4-1GBSA 1GB
Asgard VMA44UI-MEC1U2AW2 32GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-2400C17-8GFT 8GB
Kingston 9965433-034.A00LF 4GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
Samsung M393B1G70BH0-YK0 8GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston MSI24D4S7S7MH-16 16GB
Samsung 1600 CL10 Series 8GB
Apacer Technology 78.B1GQB.4010B 4GB
Samsung M393B2G70BH0-CH9 16GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
G Skill Intl F4-2133C15-16GIS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Kingston 99P5471-002.A00LF 2GB
Golden Empire CL18-20-20 D4-3000 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMK64GX4M2C3200C16 32GB
A-DATA Technology DQKD1A08 1GB
Samsung M378A5244CB0-CWE 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
报告一个错误
×
Bug description
Source link