G Skill Intl F3-10600CL9-2GBNT 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

18.1 13.2

测试中的平均数值
更快的写入速度，GB/s

15.0 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

13.2 18.1
写入速度，GB/s

8.4 15.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2070 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B5270CH0-CH9 4GB

Kingston 9905744-006.A00G 16GB

Kingston 9905744-006.A00G 16GB

Samsung 1600 CL10 Series 8GB

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Crucial Technology BLS8G4D240FSA.16FAR 8GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

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Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Corsair CMK16GX4M2Z3600C14 8GB

Corsair CMK16GX4M2Z3600C14 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Ramaxel Technology RMUA5180MH78HBF-2666 16GB

Ramaxel Technology RMUA5180MH78HBF-2666 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Corsair CMT32GX5M2B5200C40 16GB

Corsair CMT32GX5M2B5200C40 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Ramsta Ramsta-2400Mhz-4G 4GB

Ramsta Ramsta-2400Mhz-4G 4GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Gloway International (HK) STKD4XMP2400-F 4GB

Gloway International (HK) STKD4XMP2400-F 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Corsair CMR16GX4M2Z3200C16 8GB

Corsair CMR16GX4M2Z3200C16 8GB