G Skill Intl F3-14900CL8-4GBXM 4GB vs Crucial Technology CT16G4SFD8266.16FE1 16GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Crucial Technology CT16G4SFD8266.16FE1 16GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 53

左右 42% 更低的延时
更快的读取速度，GB/s

17.4 15.6

测试中的平均数值

Crucial Technology CT16G4SFD8266.16FE1 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.16FE1 16GB

报告一个错误

更快的写入速度，GB/s

13.7 10.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 53
读取速度，GB/s

17.4 15.6
写入速度，GB/s

10.9 13.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2735 2755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Corsair CMY8GX3M2A2666C10 4GB

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Apacer Technology GD2.11173T.001 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

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Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston KHX2666C16D4/32GX 32GB

Kingston KHX2666C16D4/32GX 32GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston KHX3333C16D4/16GX 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology BLS8G4D30AESCK.M8FE 8GB